Refractive indices measurement of (GaInP)m/(AlInP)nquasi‐quaternaries and GaInP/AlInP multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357699
Reference26 articles.
1. Room‐temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition
2. 0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBE
3. Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier
4. AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates
5. Continuous-wave high-power (75 mW) operation of a transverse-mode stabilised window-structure 680 nm AlGaInP visible laser diode
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