Three-dimensional organization of rare-earth atoms at grain boundaries in silicon nitride-Reference-Cited by-同舟云学术

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Three-dimensional organization of rare-earth atoms at grain boundaries in silicon nitride

Published:2005-08-08 Issue:6 Volume:87 Page:061911
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Winkelman Graham B.,Dwyer Christian,Hudson Toby S.,Nguyen-Manh Duc,Döblinger Markus,Satet Raphaelle L.,Hoffmann Michael J.,Cockayne David J. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2009067

Reference12 articles.

1. Grain Growth Studies of Silicon Nitride Dispersed in an Oxynitride Glass

2. Grain growth anisotropy of β-silicon nitride in rare-earth doped oxynitride glasses

3. Observation of rare-earth segregation in silicon nitride ceramics at subnanometre dimensions

4. Interface Structure and Atomic Bonding Characteristics in Silicon Nitride Ceramics

5. Potential of the Sinter-HIP-technique for the Development of High-temperature Resistant Si3N4-ceramics

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