Boron penetration in p-channel metal–oxide–semiconductor field-effect transistors enhanced by gate ion-implantation damage-Reference-Cited by-同舟云学术

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Boron penetration in p-channel metal–oxide–semiconductor field-effect transistors enhanced by gate ion-implantation damage

Published:2001-04-15 Issue:8 Volume:89 Page:4570-4574
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Aoyama Takayuki,Suzuki Kunihiro,Tashiro Hiroko,Tada Yoko,Arimoto Hiroshi,Horiuchi Kei

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1356428

Reference10 articles.

1. High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETs

2. Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices

3. Thermal Budget for Fabricating p+ Polysilicon Gate with Thin Gate Oxide

4. Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. STING modulators: Predictive significance in drug discovery;European Journal of Medicinal Chemistry;2019-11

2. Structure and diffusion of boron in amorphous silica: Role of oxygen vacancy related defects;Physical Review B;2009-04-06

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