Measurement of multigigahertz waveforms and propagation delays in modulation‐doped field‐effect transistors using phase‐space absorption quenching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101672
Reference19 articles.
1. Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures
2. Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology
3. Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology
4. Modulation of absorption in field-effect quantum well structures
5. Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel
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1. Optical sequence generation based on collision avoidance using chaotic mode transitions;IEEE Journal of Quantum Electronics;1998
2. Synchronized harmonic frequency mode-locking with laser diodes through optical pulse train injection;IEEE Photonics Technology Letters;1996-05
3. Experimental investigations of harmonic synchronization conditions and mechanisms of mode-locked laser diodes induced by optical-pulse injection;IEEE Journal of Selected Topics in Quantum Electronics;1996
4. Nonlinear Optics and Optoelectronics in Quasi Two Dimensional Semiconductor Structures;NATO ASI Series;1991
5. Tunable, picosecond pulse generation using a compressed, modelocked laser diode source;IEEE Photonics Technology Letters;1990-05
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