Formation of amorphous aluminum oxide and gallium oxide on InP substrates by water vapor oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368993
Reference12 articles.
1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
2. Native oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers
3. Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers
4. Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
5. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
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2. Barrier characteristics of biopolymer-based organic/inorganic Au/CTS/n-InP hybrid junctions;Philosophical Magazine;2015-09-28
3. Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n-type InP;physica status solidi (a);2011-10-05
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