High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure-Reference-Cited by-同舟云学术

High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

Published:2012-04-23 Issue:17 Volume:100 Page:172412
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Thakare Vishal,Xing Guozhong,Peng Haiyang,Rana Abhimanyu,Game Onkar,Anil Kumar P.,Banpurkar Arun,Kolekar Yesappa,Ghosh Kartik,Wu Tom,Sarma D. D.,Ogale Satishchandra B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4707373

Reference19 articles.

1. Resistive switching in transition metal oxides

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3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Magnetic Field, Temperature, and Time Controlled Manipulation of Switching Mechanism in NiO Film: Evidence of Large Magnetoconductance

5. Anisotropy and Magnetostriction of Some Ferrites

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