Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3607479
Reference19 articles.
1. Band parameters for III–V compound semiconductors and their alloys
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics
4. Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys
5. Band Anticrossing in GaInNAs Alloys
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