Toward highly conductive n-type diamond: Incremental phosphorus-donor concentrations assisted by surface migration of admolecules-Reference-Cited by-同舟云学术

Toward highly conductive n-type diamond: Incremental phosphorus-donor concentrations assisted by surface migration of admolecules

Published:2016-10-31 Issue:18 Volume:109 Page:182102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yamamoto Takashi¹²,Janssens Stoffel D.¹,Ohtani Ryota¹,Takeuchi Daisuke²³,Koizumi Satoshi¹²

Affiliation:

1. National Institute for Materials Science (NIMS), 1-1 Namiki, 305-0044 Tsukuba, Japan

2. Advanced Low Carbon Technology Research and Development Program (ALCA), Japan Science and Technology Agency (JST), c/o AIST, 1-1-1 Umezono, 305-8568 Tsukuba, Japan

3. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, 305-8568 Tsukuba, Japan

Funder

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference31 articles.

1. High-Voltage Vacuum Switch with a Diamond p–i–n Diode Using Negative Electron Affinity

2. Ultraviolet Emission from a Diamond pn Junction

3. Electrically driven single-photon source at room temperature in diamond

4. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

5. Characterization of specific contact resistance on heavily phosphorus-doped diamond films

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