Infrared studies of the evolution of the CiOi(SiI) defect in irradiated Si upon isothermal anneals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945110
Reference40 articles.
1. Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities
2. Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities
3. Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
4. Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si
5. Interaction of A-centers with isovalent impurities in silicon
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1. Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities;Applied Sciences;2022-08-15
2. First-principles Study of the Impact of Hydrogen Passivation on the Charge State Transition Levels of the CiOi(Sii)n Defect Complexes in Silicon;Silicon;2020-07-16
3. Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon;Physica B: Condensed Matter;2019-11
4. Production and annealing of the paramagnetic defects in as-grown and oxygen doped floating zone silicon irradiated with high fluence 3.5 MeV and 27 MeV electrons;Materials Science in Semiconductor Processing;2018-08
5. The CiCs(SiI)n Defect in Silicon from a Density Functional Theory Perspective;Materials;2018-04-16
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