Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films-Reference-Cited by-同舟云学术

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Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

Published:1999-10-15 Issue:8 Volume:86 Page:4403-4411
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pässler R.,Griebl E.,Riepl H.,Lautner G.,Bauer S.,Preis H.,Gebhardt W.,Buda B.,As D. J.,Schikora D.,Lischka K.,Papagelis K.,Ves S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.371378

Reference45 articles.

1. Temperature dependence of energy gaps in some II–VI compounds

2. ÉTUDE DES NIVEAUX D'IMPURETÉ ASSOCIÉS AUX MINIMA SUPÉRIEURS DE LA BANDE DE CONDUCTION DANS QUELQUES COMPOSÉS II-VI

3. Temperature dependence of the fundamental edge of germanium and zinc-blende-type semiconductors

4. Temperature dependence of optical transitions between electronic energy levels in semiconductors

5. Temperature coefficients of some characteristic reflectivity structure of ZnSe and ZnS

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