Thermally activated interface shift in the tungsten/silicon multilayers-Reference-Cited by-同舟云学术

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Thermally activated interface shift in the tungsten/silicon multilayers

Published:1996-08-12 Issue:7 Volume:69 Page:919-921
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jergel M.,Bochníček Z.,Majková E.,Senderák R.,Luby Š.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116943

Reference7 articles.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stress and structure properties of X-ray W/Si multilayer under low temperature annealing;Acta Physica Sinica;2016

2. Thermally induced interface changes in W/B4C multilayers;Thin Solid Films;2015-08

3. Advanced nanometer-size structures;Acta Physica Slovaca. Reviews and Tutorials;2007-12-01

4. UV sub-ps laser pulse patterning of Mo/Si and W/Si multilayers for soft x-ray gratings;SPIE Proceedings;2005-06-07

5. Interdiffusion in amorphous Nb/Si multilayers;Materials Letters;2000-08

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