The influence of annealing ambient on the shrinkage kinetics of oxidation‐induced stacking faults in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90940
Reference22 articles.
1. Electrically Active Stacking Faults in Silicon
2. Relationship Between Process-Induced Defects and Soft P-N Junctions in Silicon Devices
3. Evaluation of dark‐current nonuniformity in a charge‐coupled device
4. The effect of oxidation‐expanded defects upon MOS parameters
5. Oxidation, defects and vacancy diffusion in silicon
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