Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates-Reference-Cited by-同舟云学术

Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates

Published:2017-12 Issue:12 Volume:7 Page:125210
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Afalla Jessica P. C.¹,de los Reyes Alexander²^ORCID,Mag-usara Valynn Katrine¹,Lopez Lorenzo P.²,Yamamoto Kohji¹,Tani Masahiko¹,Somintac Armando S.²^ORCID,Salvador Arnel A.²,Estacio Elmer S.²

Affiliation:

1. Research Center for Development of Far-Infrared Region, Fukui University, Fukui City 910-8507, Japan

2. Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman, Quezon City 1101, Philippines

Funder

Department of Science and Technology Grants-In-Aid Program, Philippines

Philippine Council for Energy, Industry and Emerging Technology Research and Development

University of the Philippines Office of the Vice-Chancellor for Research and Development

Commission on Higher Education

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5004597

Reference34 articles.

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4. Photoreflectance and Photoluminescence Characterization of GaAs Quantum Wells Grown by Molecular Beam Epitaxy on Flat and Misoriented Substrates

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