Plexcitonic system for high photonic spin Hall effect

Abstract

The photonic spin Hall effect (PSHE) has been intensively studied and widely applied, especially in spin photonics. In this paper, we present the analysis of PSHE in the Plexcitonic system. The signature of the Plexciton is studied by implanting an organic semiconductor layer over the plasmon active metal. We report a high spin-dependent transverse shift of ∼ 60 μm, which is ∼200-fold larger than that of the pure Plasmonic counterpart. The underlying mechanism of PSHE is explained in the circular-polarization basis using the concept of superposition of abnormal and normal modes. It is observed that the transverse shift is highly sensitive to the alterations in the environmental refractive indices leading to its application as a highly sensitive PSHE-based refractometer, with a high sensitivity of 81°/RIU. We believe these results may open pathways for modulating the PSHE and developing nanophotonic applications such as advanced sensors and next-generation optical devices.