Measurement of Relative Minority‐Carrier Lifetimes and Luminescence‐Center Concentrations in GaP(Zn,O)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659891
Reference3 articles.
1. Recombination Kinetics of Electrons and Holes at Isoelectronic Impurities: GaP (Zn,O)
2. Luminescence and Minority Carrier Recombination inp-Type GaP(Zn,O)
3. Measurement of Free‐Carrier Lifetimes in GaP by Photoinduced Modulation of Infrared Absorption
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Solid composition and gallium and phosphorus vacancy concentration isobars for GaP;Journal of Applied Physics;1974-08
2. Optical techniques useful for characterizing GaP crystals (review article);Journal of Electronic Materials;1974-08
3. The Effect of Heat-Treatment on Photoluminescence Efficiency and Minority Carrier Lifetime in LEC-GaP(Zn,O);Journal of The Electrochemical Society;1974
4. Zn(PO[sub 3])[sub 2] Glass as a Doping Source for GaP(Zn,O);Journal of The Electrochemical Society;1972
5. Luminescence and doping characteristics of liquid encapsulation Czochralski grown GaP(Zn, O);Journal of Physics and Chemistry of Solids;1972-01
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