Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP-Reference-Cited by-同舟云学术

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Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP

Published:1996-03-25 Issue:13 Volume:68 Page:1796-1798
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Murata H.,Hsu T. C.,Ho I. H.,Su L. C.,Hosokawa Y.,Stringfellow G. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116016

Reference20 articles.

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. Effect of Sb on the quantum efficiency of GaInP solar cells;Progress in Photovoltaics: Research and Applications;2016-04-18

3. Optical in situ calibration of Sb for growing disordered GaInP by MOVPE;Journal of Crystal Growth;2015-09

4. Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium;Journal of Applied Physics;2012-07-15

5. Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N2;Journal of Crystal Growth;2010-04

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