Behavior of the layered crystals TlInS2 and TlGaSe2 near phase transitions in a static electric field
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.593863
Reference16 articles.
1. Phase transitions and polytypes in β TlInS2ferroelectric-semiconductor
Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Моделирование электронных свойств, энтальпия образования и диэлектрические характеристики Yb-легированного монокристалла TlInS<sub>2</sub>;Журнал физической химии;2024-07-19
2. Simulation of Electronic Properties, Enthalpy of Formation, and Dielectric Characteristics of Yb-Doped Single Crystal TlInS2;Russian Journal of Physical Chemistry A;2024-01
3. Modification of the optical and elastic properties of TlGaSe2 layered semiconductor produced by the memory effect;Physica Scripta;2023-11-08
4. Influence of native structural defects activated by illumination and under the memory effect conditions on ultrasonic wave propagation in TlInS2 ferroelectric–semiconductor with incommensurate phase;Materials Research Express;2019-05-31
5. Identification of Mn dopant in the structure of TlInS2 layered semiconductor;Materials Research Express;2019-02-22
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