Interband tunneling for hole injection in III-nitride ultraviolet emitters-Reference-Cited by-同舟云学术

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Published:2015-04-06 Issue:14 Volume:106 Page:141103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Yuewei¹^ORCID,Krishnamoorthy Sriram¹,Johnson Jared M.²,Akyol Fatih¹,Allerman Andrew³,Moseley Michael W.³,Armstrong Andrew³,Hwang Jinwoo²,Rajan Siddharth¹²

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

3. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

National Science Foundation

Sandia National Laboratories, National Nuclear Security Administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/1.4917529

Reference35 articles.

1. AlGaN multiple quantum well based deep UV LEDs and their applications

2. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

3. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

4. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

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