Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack-Reference-Cited by-同舟云学术

Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack

Published:2020-06-01 Issue:6 Volume:10 Page:065221
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Ju Hyunsu¹^ORCID,Yang Min Kyu²^ORCID

Affiliation:

1. Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea

2. Department of IT Convergence Engineering & Intelligent Electronic Device Lab, Sahmyook University, 815 Hwarang-ro, Nowon-Gu, Seoul 01795, South Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0010045

Reference28 articles.

1. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

2. Reproducible switching effect in thin oxide films for memory applications

3. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

4. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface

5. Nonvolatile Memory with Multilevel Switching: A Basic Model

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