Perpendicular spin-torque switching with a synthetic antiferromagnetic reference layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3441402
Reference17 articles.
1. A 4-Mb toggle MRAM based on a novel bit and switching method
2. Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
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