Magnetotransport probing of the quality of the heterointerfaces and degree of symmetry of the potential profile of quantum wells in the valence band of the Ge1−xSix/Ge/Ge1−xSix heterosystem

Author:

Yakunin M. V.,Alshanskii G. A.,Arapov Yu. G.,Neverov V. N.,Harus G. I.,Shelushinina N. G.,Kuznetsov O. A.,de Visser A.,Ponomarenko L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous)

Reference12 articles.

1. Silicon-germanium—a promise into the future?

2. SiGe heterostructures for FET applications

3. M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov, V. N. Neverov, O. A. Kuznetsov, L. Ponomarenko, and A. de Visser, inProceedings of the 15th International Conference on High Magnetic Fields in Semiconductor Physics, Oxford, UK 2002, publ. on CD-ROM; Nanotechnology NNOTER11, 351 (2000).NNOTER0957-4484

4. Missing integral quantum Hall effect in a wide single quantum well

5. Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE

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