Enhancing photostability of 2D Ruddlesden–Popper perovskite via molecular acceptor passivation of metallic lead defects

Author:

Kim Kitae12ORCID,Kang Donghee1,Blumstengel Sylke34ORCID,Morales Nicolas Zorn34ORCID,List-Kratochvil Emil J. W.345ORCID,Cho Sang Wan6ORCID,Lee Hyunbok7ORCID,Park Soohyung28ORCID,Yi Yeonjin1ORCID

Affiliation:

1. Department of Physics and van der Waals Materials Research Center, Yonsei University 1 , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. Advanced Analysis & Data Center, Korea Institute of Science and Technology (KIST) 2 , Seoul 02792, Republic of Korea

3. Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin 3 , Brook-Taylor Straße 6, 12489 Berlin, Germany

4. Institut für Chemie, Humboldt-Universität zu Berlin 4 , Brook-Taylor Straße 6, 12489 Berlin, Germany

5. Helmholtz-Zentrum für Materialien und Energie GmbH 5 , Bereich Solarenergieforschung, Albert-Einstein Straße 15, 12489 Berlin, Germany

6. Department of Physics, Yonsei University 6 , 1 Yonseidae-gil, Wonju-si, Gangwon-do 26493, Republic of Korea

7. Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University 7 , 1 Gangwondaehak-gil, Chuncheon-si, Gangwon-do 24341, Republic of Korea

8. Division of Nano & Information Technology, KIST School, University of Science and Technology (UST) 8 , Seoul 02792, Republic of Korea

Abstract

Two-dimensional (2D) Ruddlesden–Popper (RP) perovskites hold great potential for novel optoelectronic applications. However, their unconventional optoelectronic properties are often compromised by a vulnerability to light irradiation, which leads to the formation of metallic Pb (Pb0) defects. This study investigates the passivation mechanism of these Pb0 defects in phenylethylammonium lead iodide (PEA2PbI4) using a strong molecular acceptor, 2,2′-(perfluoronaphthalene-2, 6-diylidene) dimalononitrile (F6-TCNNQ). In situ x-ray photoelectron spectroscopy results demonstrate that F6-TCNNQ effectively removes the light-induced Pb0 states, leading to the recovery of photoluminescence intensity in photodegraded PEA2PbI4 samples and significantly improving the photostability of pristine PEA2PbI4. F6-TCNNQ protects the terrace edge of PEA2PbI4, which is the site of initial degradation, as evidenced by atomic force microscopy and scanning electron microscopy analyses. In situ ultraviolet photoelectron spectroscopy measurements confirm substantial electron transfer from Pb0 to F6-TCNNQ, causing the oxidation of Pb0 to Pb2+. Furthermore, the staggered energy level alignment prevents electron transfer from the valence band maximum of PEA2PbI4 to the lowest unoccupied molecular orbital of F6-TCNNQ, thereby preserving the pristine electronic structure of PEA2PbI4. These findings provide new insights into defect passivation in 2D RP perovskites and offer a design strategy for highly stable optoelectronic devices.

Funder

National Research Foundation of Korea

Samsung Display Company

KIST Institutional Program

Industry-academy joint research program between samsung electgroniscs and Yonsei university

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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