Effect of deposition mechanisms on the infrared photoluminescence of erbium-ytterbium silicate films under different sputtering methods-Reference-Cited by-同舟云学术

Effect of deposition mechanisms on the infrared photoluminescence of erbium-ytterbium silicate films under different sputtering methods

Published:2019-05-07 Issue:17 Volume:125 Page:175114
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhou P. Q.¹,Wang X. J.¹,He Y. D.²,Wu Z. F.³,Du J. L.³,Fu E. G.³

Affiliation:

1. State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China

2. Institute of Microelectronics, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China

3. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5089677

Reference22 articles.

1. Self-assembled infrared-luminescent Er–Si–O crystallites on silicon

2. 1.53 µm photo- and electroluminescence from Er3+in erbium silicate

3. Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

4. Spontaneous emission rate and optical amplification of Er3+ in double slot waveguide

5. Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework

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