Examining the screening limit of field effect devices via the metal-insulator transition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1897076
Reference23 articles.
1. CMOS design near the limit of scaling
2. Moore's Law Forever?
3. Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
4. A field effect transistor based on the Mott transition in a molecular layer
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