Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory-Reference-Cited by-同舟云学术

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Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

Published:2013-03-11 Issue:10 Volume:102 Page:103110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gu Yifeng,Song Sannian,Song Zhitang,Bai Suyuan,Cheng Yan,Zhang Zhonghua,Liu Bo,Feng Songlin

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4795595

Reference21 articles.

1. Phase-change materials for rewriteable data storage

2. Phase change materials: From material science to novel storage devices

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3. Influence of yttrium element on the crystallization performance of ZnSb alloy for phase change memory application;The European Physical Journal Applied Physics;2023

4. Study on the Crystallization Behavior of Sb2Te Thin Films for Phase-Change Memory Applications;Journal of Electronic Materials;2022-12-12

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