Surface structure of (NH4)2Sx‐treated GaAs (100) in an atomic resolution
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111531
Reference10 articles.
1. Passivation of GaAs(001) surfaces by chalcogen atoms (S, Se and Te)
2. First-principles study of sulfur passivation of GaAs(001) surfaces
3. Marked Reduction of the Surface/Interface States of GaAs by (NH4)2SxTreatment
4. Marked Reduction of the Surface/Interface States of GaAs by (NH4)2SxTreatment
5. Surface structure of selenium‐treated GaAs (001) studied by field ion scanning tunneling microscopy
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