Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications-Reference-Cited by-同舟云学术

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Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications

Published:2007-10-22 Issue:17 Volume:91 Page:172108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kittl J. A.,Pawlak M. A.,Torregiani C.,Lauwers A.,Demeurisse C.,Vrancken C.,Absil P. P.,Biesemans S.,Coia C.,Detavernier C.,Jordan-Sweet J.,Lavoie C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2799247

Reference12 articles.

1. Towards implementation of a nickel silicide process for CMOS technologies

2. Ni- and Co-based silicides for advanced CMOS applications

3. Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical investigation of the influence of reaction and diffusion kinetics upon thin-film reactive diffusion;Physical Review B;2012-06-01

2. Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2layer synthesized by ion implantation;Journal of Semiconductors;2011-10

3. A Model for Formation and Consumption of Transient Phase;Solid State Phenomena;2011-06

4. TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC;MATERIALS TRANSACTIONS;2011

5. Composition measurement of the Ni-silicide transient phase by atom probe tomography;Applied Physics Letters;2010-06-28

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