Measurement of the conduction‐band discontinuity in pseudomorphic InxGa1−xAs/In0.52Al0.48As heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106552
Reference17 articles.
1. Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition
2. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
3. Very-high-performance highly strained Ga/sub 0.23/In/sub 0.77/As channel MODFETs
4. Effects of carrier transport on high‐speed quantum well lasers
5. Fading reduction in LOS microwave links due to path inclination
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