Low‐temperature photoluminescence from CdTe grown by hot‐wall epitaxy on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101660
Reference14 articles.
1. High quality CdTe epilayers on GaAs grown by hot‐wall epitaxy
2. Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces
3. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate
4. Recent progress on LADA growth of HgCdTe and CdTe epitaxial layers
5. Photoluminescence spectroscopy of excitons for evaluation of high-quality CdTe crystals
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence from heteroepitaxial (211)B CdTe grown on (211)B GaAs by molecular beam epitaxy;Journal of Applied Physics;1993-12
2. High-quality CdTe(100)/GaAs(100) grown by hot-wall epitaxy using gold tube radiation shield;Journal of Crystal Growth;1993-06
3. Photoluminescence ofn‐type CdTe:I grown by molecular beam epitaxy;Journal of Applied Physics;1993-05
4. CdTe(111) growth on misoriented Si(100) substrates by hot-wall epitaxy;Journal of Crystal Growth;1993-04
5. CdTe(111) growth on sapphire(0001) substrates by hot wall epitaxy;Thin Solid Films;1992-05
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