Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)2(CdSe)n short-period-superlattices multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369556
Reference17 articles.
1. 100 h II-VI blue-green laser diode
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3. Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing
4. Enhanced/suppressed interdiffusion of lattice-matched and pseudomorphic III?V heterostructures by controlling Ga vacancies
5. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
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1. Observation of a non-constant Cd diffusion coefficient during the thermal annealing of Zn1-Cd Se quantum wells;Journal of Alloys and Compounds;2020-12
2. Layer-by-Layer Growth of Thin Films of Ternary Alloys of II–VI Semiconductors by Submonolayer Pulsed Beam Epitaxy (SPBE);Molecular Beam Epitaxy;2018
3. Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors;Molecular Beam Epitaxy;2013
4. Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure;Semiconductor physics, quantum electronics and optoelectronics;2010-04-30
5. Thermal stability of CdZnO∕ZnO multi-quantum-wells;Applied Physics Letters;2007-11-12
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