Direct observation of conductive filament formation in Alq3 based organic resistive memories-Reference-Cited by-同舟云学术

Direct observation of conductive filament formation in Alq3 based organic resistive memories

Published:2015-08-21 Issue:7 Volume:118 Page:075501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Busby Y.¹,Nau S.²,Sax S.²,List-Kratochvil E. J. W.²³,Novak J.⁴^ORCID,Banerjee R.⁴,Schreiber F.⁴,Pireaux J.-J.¹

Affiliation:

1. Research Center in the Physics of Matter and Radiation (PMR), Laboratoire Interdisciplinaire de Spectroscopie Electronique (LISE), University of Namur, B-5000 Namur, Belgium

2. NanoTecCenter Weiz Forschungsgesellschaft mbH, Franz-Pichler Straße 32, A-8160 Weiz, Austria

3. Institute of Solid State Physics, Graz University of Technology, A-8010 Graz, Austria

4. Institute of Applied Physics, Eberhard-Karls-Universität Tübingen, D-72076 Tübingen, Germany

Funder

Seventh Framework Programme (European Union Seventh Framework Programme)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928622

Reference46 articles.

1. Polymer-Based Resistive Memory Materials and Devices

2. Electrical memory devices based on inorganic/organic nanocomposites

3. Organic Non-Volatile Resistive Photo-Switches for Flexible Image Detector Arrays

4. Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film

5. Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq3)/ZnSe organic-inorganic bistable device

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