Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871693
Reference21 articles.
1. Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy
2. Disproportionation and comproportionation reactions of resistive switching in polycrystalline NiOx films
3. Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films
4. Effect of Ni3+ concentration on the resistive switching behaviors of NiO memory devices
5. Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
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2. Optical properties and defects of ZnO nanorods that are modified by treatment with $$\hbox {H}_2\hbox {O}_2$$ and used as conductive filaments for poly(methyl methacrylate)-based resistive switching applications;Bulletin of Materials Science;2020-03-31
3. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics;Chemical Physics Letters;2018-01
4. Resistive switching characteristics of devices having a trilayer CuAlO x structure in the dark and under visible light illumination;Journal of Materials Science: Materials in Electronics;2017-06-09
5. Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlO thin films;Journal of Alloys and Compounds;2017-01
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