Studies of steam‐oxidized WSi2by Auger sputter profiling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91915
Reference4 articles.
1. Oxidation mechanisms in WSi2thin films
2. Kinetics of the thermal oxidation of WSi2
3. Auger depth profiling of MNOS structures by ion sputtering
4. An Auger analysis of the SiO2‐Si interface
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1. Effect of annealing ambient on WSi[sub x](x=2.3) sidewall deformation and contact resistance in dichlorosilane-based W-polycide gate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
2. Sidewall oxidation behavior of dichlorosilane-based W-polycide gate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
3. Oxidation Behavior of Nitrogen Implanted Dichlorosilane‐Based W‐polycide Gate;Journal of The Electrochemical Society;1999-12-01
4. A Gate Electrode Fabrication Technique Using Dichlorosilane-Based W-Polycide with Monosilane-Based WSi[sub x] Nucleation Layer;Electrochemical and Solid-State Letters;1999
5. Studies on structural, electrical, compositional, and mechanical properties of WSix thin films produced by low-pressure chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-05
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