Observations of Al segregation around dislocations in AlGaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1391409
Reference14 articles.
1. Growth and applications of Group III-nitrides
2. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
3. Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
4. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
5. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
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