Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96308
Reference8 articles.
1. Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compounds
2. Effects influencing the structural integrity of semiconductors and their alloys
3. Mercury zinc telluride, a new narrow‐gap semiconductor
4. Recent progress on LADA growth of HgCdTe and CdTe epitaxial layers
5. Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy
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2. Material-Related Growth Characteristics in MBE;Molecular Beam Epitaxy;1996
3. Thermodynamic analysis and mass flux of the HgZnTe-HgI2 chemical vapor transport system;Journal of Crystal Growth;1993-08
4. Molecular beam epitaxial growth and characterization of ZnTe and ZnTe-CdTe superlattice;Journal of Crystal Growth;1992-05
5. Determination of the liquidus lines and isotherms of the Hg-Zn-Te system by a modified direct observation method;Journal of Electronic Materials;1991-03
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