Low frequency noise characterization of self‐aligned InP/InGaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360114
Reference9 articles.
1. Subpicosecond InP/InGaAs heterostructure bipolar transistors
2. (In,Ga)As/InP n-p-n heterojunction bipolar transistors grown by liquid phase epitaxy with high DC current gain
3. InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus ICcharacteristic
4. High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy
5. High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors
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1. Experimental technique for the performance evaluation and optimization of 1/f noise spectrum investigation in electron devices;Measurement;2017-02
2. Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors;Solid-State Electronics;2005-08
3. Low-frequency noise behavior in GaN HEMTs on silicon substrate;SPIE Proceedings;2004-05-25
4. Coherent tools for physics-based simulation and characterization of noise in semiconductor devices oriented to nonlinear microwave circuit CAD;SPIE Proceedings;2004-05-25
5. Noise model of InP-InGaAs SHBTs for RF circuit design;IEEE Transactions on Microwave Theory and Techniques;2002-07
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