Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC-Reference-Cited by-同舟云学术

Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC

Published:2018-07 Issue:7 Volume:8 Page:075216
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Deng Sihao¹,Wang Lielin¹,Xie Hua¹,Wang Zaihong¹,Wang Yutian²,Jiang Shuqing³,Guo Hui²

Affiliation:

1. Fundamental Science on Nuclear Wastes and Environmental Safety Laboratory, Southwest University of Science and Technology, Mianyang 621010, People’s Republic of China

2. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xian 710071, People’s Republic of China

3. Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, People’s Republic of China

Funder

Longshan academic talent research supporting program of SWUST

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5025574

Reference28 articles.

1. A micromachining-based technology for enhancing germanium light emission via tensile strain

2. Strained silicon as a new electro-optic material

3. Mesoscopic Percolating Resistance Network in a Strained Manganite Thin Film

4. Strain-Engineered Modulation on the Electronic Properties of Phosphorous-Doped ZnO

5. First-principles study of uniaxial strained and bent ZnO wires

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