Modeling of nucleation and growth of voids in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368128
Reference21 articles.
1. Etch Pits Observed in Dislocation-Free Silicon Crystals
2. VACANCY CLUSTERS IN DISLOCATION‐FREE SILICON
3. Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals
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2. Extended Defects in Semiconductors and Their Interactions with Point Defects and Impurities;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07
3. Point Defects, Diffusion, and Precipitation;Materials Science and Technology;2013-02-15
4. Void formation in melt-grown silicon studied by molecular dynamics simulations: From grown-in faulted dislocation loops to vacancy clusters;Applied Physics Letters;2011-08-22
5. Voids and Nanocavities in Silicon;Topics in Applied Physics;2009
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