Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique

Author:

Huang X. Q.,Wang Y. L.,Li L.,Liang L.,Liu F. Q.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Growth of Low-Dimensional Semiconductors Structures;Comprehensive Semiconductor Science and Technology;2011

2. InGaAs quantum wires grown on (100)InP substrates;Journal of Crystal Growth;2009-03

3. Epitaxial Semiconductor Quantum Wires;Journal of Nanoscience and Nanotechnology;2008-07-01

4. Ordering of Self-Assembled Quantum Wires on InP(001) Surfaces;One-Dimensional Nanostructures;2008

5. In(Ga, Al)As quantum dot/wire growth on InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

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