Nitrogen passivation of deposited oxides on n 4H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1525058
Reference18 articles.
1. Intrinsic SiC/SiO2 Interface States
2. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
3. Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
4. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
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1. High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation*;Chinese Physics B;2020-03-01
2. Study on the effects of Si implantation on the interface of 4H-SiC lateral MOSFETs;Japanese Journal of Applied Physics;2020-02-03
3. High-pressure microwave plasma oxidation of 4H-SiC with low interface trap density;AIP Advances;2019-12-01
4. Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment;Japanese Journal of Applied Physics;2019-02-22
5. Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing;Ceramics International;2018-08
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