Stable amorphous silicon double stacked solar cell using low band gap amorphous silicon bottomilayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106806
Reference6 articles.
1. Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
2. Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the “Chemical Annealing”
3. Very Stable a-Si:H Prepared by “Chemical Annealing”
4. Amorphous silicon double stacked solar cell using low band gap A-Si bottom cell
5. Characterized of glow-discharge deposited a-Si:H
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Principles for Controlling the Electronic Quality of High-Rate Deposited a-Si:H Films;Le Journal de Physique IV;1995-06
2. Growth of microcrystalline silicon by remote plasma chemical vapor deposition without hydrogen dilution;Journal of Applied Physics;1994-03-15
3. Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in thin‐film transistor structure by space charge limited current measurement;Applied Physics Letters;1993-08-09
4. Improved Amorphous Silicon Solar Cells Using RPCVD;MRS Proceedings;1993-01-01
5. Growth of Polycrystalline Silicon films at low Temperature by Remote Plasma CVD;MRS Proceedings;1992
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