Nitrogen-promoted formation of graphite-like aggregations in SiC during neutron irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3697681
Reference34 articles.
1. Radiation-induced displacement damage in silicon carbide blue light-emitting diodes
2. On the UV responsivity of neutron irradiated 4H-SiC
3. Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons
4. Silicon carbide FETs for high temperature nuclear environments
5. Characterization of phosphorus doped n-type 6H-silicon carbide epitaxial layers produced by nuclear transmutation doping
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4. Investigation of the recovery behavior of irradiation defects induced by a neutron in 4H-SiC combining Raman scattering and lattice parameters;Journal of Materials Research;2022-08-12
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