Time‐dependent diffusion of ion‐implanted arsenic in thermally grown SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341667
Reference12 articles.
1. Diffusion of ion‐implanted phosphorus within thermally grown SiO2in O2ambient
2. Diffusivity Summary of B, Ga, P, As, and Sb in SiO[sub 2]
3. Oxygen effects on arsenic diffusion in silicon dioxide
4. Anomalous Arsenic Diffusion in Silicon Dioxide
5. Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 Films
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2. Effect of SiO2 surface conditions on the diffusion and interaction of co-implanted In and As atoms;Journal of Non-Crystalline Solids;2021-02
3. Growth of embedded Ge nanoclusters inside spatially confined SiO2 matrix: An in-situ TEM study;Physica E: Low-dimensional Systems and Nanostructures;2019-10
4. Diffusion and Interaction of In and As Implanted into SiO2 Films;Semiconductors;2019-08
5. Diffusion of germanium in silica glass;Journal of Non-Crystalline Solids;2005-08
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