Giant optical bistable behavior using triple‐barrier resonant tunneling light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110484
Reference8 articles.
1. Electroluminescence and impact ionization phenomena in a double‐barrier resonant tunneling structure
2. Electroluminescence from bipolar resonant tunneling diodes
3. Optical switching characteristics of a bistable resonant tunnelling light emitting diode
4. Low dimensional devices: High magnetic field and optical spectroscopy studies of resonant tunneling and quantum well phenomena
5. pnpresonant tunneling light emitting transistor
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1. Optical Spectroscopy of Carrier Relaxation and Transport in III/V Semiconductor Tunneling Structures;Frontiers of Nano-Optoelectronic Systems;2000
2. Dynamical DX centre breakdown in submicrometre AlGaAs/GaAs structures;Semiconductor Science and Technology;1999-01-01
3. A novel approach to a tunneling lifetime calculation: the projected Green's function method;IEEE Journal of Quantum Electronics;1998
4. Multi-Gigahertz Optoelectronic Devices;New Directions in Terahertz Technology;1997
5. Optical modulation with a resonant tunnelling diode;IEE Proceedings - Optoelectronics;1996-02-01
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