Observation of crossing pores in anodically etched n-GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1350433
Reference13 articles.
1. Macroporous silicon with a complete two‐dimensional photonic band gap centered at 5 μm
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4. Photonic band structure: The face-centered-cubic case employing nonspherical atoms
5. Formation of visible light emitting porous GaAs micropatterns
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