Temperature dependence of intersubband transitions in InAs/AlSb quantum wells-Reference-Cited by-同舟云学术

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Temperature dependence of intersubband transitions in InAs/AlSb quantum wells

Published:2003-11-10 Issue:19 Volume:83 Page:3936-3938
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Larrabee D. C.,Khodaparast G. A.,Kono J.,Ueda K.,Nakajima Y.,Nakai M.,Sasa S.,Inoue M.,Kolokolov K. I.,Li J.,Ning C. Z.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1626264

Reference24 articles.

1. Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

2. Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

3. III-V interband 5.2 μm laser operating at 185 K

4. III-V interband 5.2 μm laser operating at 185 K

5. III-V interband 5.2 μm laser operating at 185 K

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1. Above-77 K operation of charge sensitive infrared phototransistor with dynamically controlled optical gate;Applied Physics Letters;2024-03-25

2. Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts;Nanotechnology;2024-03-08

3. Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings;Optics Express;2023-07-27

4. Optical Response in Strained Type-II AlInAs/AlSb Ultrathin QW Heterostructure;Lecture Notes in Electrical Engineering;2022-10-05

5. Investigating the physics of higher-order optical transitions in InAs/GaSb superlattices;Physical Review B;2021-08-09

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