Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

Published:2013-09-07 Issue:9 Volume:114 Page:094306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Maryński A.,Sęk G.,Musiał A.,Andrzejewski J.,Misiewicz J.,Gilfert C.,Reithmaier J. P.,Capua A.,Karni O.,Gready D.,Eisenstein G.,Atiya G.,Kaplan W. D.,Kölling S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4820517

Reference58 articles.

1. InAs/InP Quantum-Dash Lasers and Amplifiers

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5. Special Issue on Optoelectronic Devices Based on Quantum Dots

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