Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

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Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots

Published:2020-02-24 Issue:8 Volume:116 Page:082101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Hao¹²^ORCID,Zhuo Zhiyao¹²,Huang Junhui¹²,Dou Xiuming¹²,He Xiaowu¹²,Ding Kun¹,Ni Haiqiao¹²,Niu Zhichuan¹²³,Jiang Desheng¹,Sun Baoquan¹²³

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

3. Beijing Academy of Quantum Information Sciences, Beijing 100193, China

Funder

National Key Research and Development Program of China

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142482

Reference27 articles.

1. Evolution of Entanglement Between Distinguishable Light States

2. Observation of entanglement between a quantum dot spin and a single photon

3. Interfacing single photons and single quantum dots with photonic nanostructures

4. Solid-state single-photon emitters

5. Generation of heralded entanglement between distant hole spins

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of random alloy disorder, shape deformation, and substrate misorientation on the exciton lifetime and fine structure splitting of GaAs/AlxGa1−xAs (111) quantum dots;Physical Review B;2023-05-24

2. Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement;Crystals;2021-09-30

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