Transresistance and current gain of high‐Tcflux flow transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357248
Reference11 articles.
1. Sparameter measurements on single superconducting thin‐film three‐terminal devices made of high‐Tcand low‐Tcmaterials
2. Single superconducting thin film devices for applications in high T/sub c/ materials circuits
3. A model and equivalent circuit for a superconducting flux flow transistor
4. Characteristics of superconducting flux-flow transistors
5. A Josephson junction to FET high speed line driver made of TlCaBaCuO
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1. Modeling of I–V characteristics in a 3-channel SFFT with nanobridges by gate current signals;Physica C: Superconductivity and its Applications;2018-04
2. Improved Transresistance Characteristics of Inductance-gate Type SFFT Using AFM Lithography;Acta Physica Polonica A;2015-04
3. Transistor characteristics of a parallel-channel and a serial-channel superconducting flux flow transistor fabricated by the AFM anodization process;Current Applied Physics;2009-01
4. Fabrication of a superconducting flux flow transistor with a serial-channel structure by an AFM lithography method;Journal of Electroceramics;2008-04-29
5. Characteristics of a single-channel superconducting flux flow transistor fabricated by an AFM modification technique;Physica C: Superconductivity;2007-11
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