Structural and electrical properties of SiNx:H films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353780
Reference31 articles.
1. Amorphous-silicon field-effect device and possible application
2. High Efficiency Amorphous Silicon Based Solar Cells: A Review
3. Gap states in silicon nitride
4. Energy level of the nitrogen dangling bond in amorphous silicon nitride
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